FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Product Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Now

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Name: FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
Brand: Hua Xuan Yang
Price: 1 USD

Quality FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance for sale

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : FMMT491

Type : Silicon Power Transistor

FEATURE : Low equivalent on-resistance

Collector-Emitter Voltage : 60v

Storage Temperature : -55～+150℃

Collector Power Dissipation : 250mW

Peak Pulse Current : 2A

Contact Now

SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)

FEATURE

Low equivalent on-resistance

Marking :491

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	80	V
VCEO	Collector-Emitter Voltage	60	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	1	A
ICM	Peak Pulse Current	2	A
PC	Collector Power Dissipation	250	mW
RΘJA	Thermal Resistance From Junction To Ambient	500	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	80			V
Collector-emitter breakdown voltage	V(BR)CEO1	I_C=10mA,I_B=0	60			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100μA,I_C=0	5			V
Collector cut-off current	ICBO	V_CB=60V,I_E=0			0.1	μA
Emitter cut-off current	IEBO	V_EB=4V,I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE=5V,I_C=1mA	100
	hFE(2) 1	V_CE=5V,I_C=500mA	100		300
	hFE(3) 1	V_CE=5V,I_C=1A	80
	hFE(4) 1	V_CE=5V,I_C=2A	30
Collector-emitter saturation voltage	VCE(sat)1 1	I_C=500mA,I_B=50mA			0.25	V
	VCE(sat)2 1	I_C=1A,I_B=100mA			0.5	V
Base-emitter saturation voltage	VBE(sat) 1	I_C=1A,I_B=100mA			1.1	V
Base-emitter voltage	1 VBE	V_CE=5V,I_C=1A			1	V
Transition frequency	fT	V_CE=10V,I_C=50mA,,f=100MHz	150			MHz
Collector output capacitance	Cob	V_CB=10V,f=1MHz			10	pF

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

Typical Characterisitics

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e	0.950 TYP		0.037 TYP
e1	1.800	2.000	0.071	0.079
L	0.550 REF		0.022 REF
L1	0.300	0.500	0.012	0.020
θ	0°	8°	0°	8°

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Product Tags:

high frequency transistor

power mosfet transistors

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!