Sign In | Join Free | My chinaqualitycrafts.com
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd logo
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
Active Member

6 Years
Home > Semiconductor Triode >

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

Product Categories
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Contact Now

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : TIP110

Feature : Industrial Use

Product ID : TIP110

Emitter-Base Voltage : 5V

Collector Current -Continuous : 2A

Contact Now

TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN)

FEATURE
  • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use

AXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 to +150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10mA,IE=0 60 V
Collector-emitter sustaining voltage VCEO(sus) IC=30mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC=0 5 V
Collector cut-off current ICEO VCE=30V,IB=0 2 mA
Collector cut-off current ICBO VCB=60V,IE=0 1 mA
Emitter cut-off current IEBO VEB=5V,IC=0 2 mA

DC current gain

 hFE(1) VCE=4V,IC=1A 1000
hFE(2) VCE=4V,IC=2A 500
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=8mA 2.5 V
Base-emitter voltage VBE VCE=4V,IC=2A 2.8 V
Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz 100 pF

TO-220-3L Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance


Product Tags:

electronic components triode

      

semiconductor switch

      
Quality TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance for sale

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like